Lateral coherence properties of broad‐area semiconductor quantum well lasers
نویسندگان
چکیده
منابع مشابه
Laser-induced quantum coherence in a semiconductor quantum well.
The phenomenon of electromagnetically induced quantum coherence is demonstrated between three confined electron subband levels in a quantum well which are almost equally spaced in energy. Applying a strong coupling field, two-photon resonant with the 1-3 intersubband transition, produces a pronounced narrow transparency feature in the 1-2 absorption line. This result can be understood in terms ...
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The amplitude-phase coupling factor a (linewidth enhancement factor) is compared in typical semiconductor quantum-well and bulk double heterostructure lasers. As a direct consequence of the reduction of the differential gain, there is no reduction of a in the single quantum-well lasers compared to the bulk lasers. The number of quantum wells strongly affects the amplitude-phase coupling in quan...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1986
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.337629